Gain characteristics of InGaN/GaN quantum well diode lasers
Identifieur interne : 016128 ( Main/Repository ); précédent : 016127; suivant : 016129Gain characteristics of InGaN/GaN quantum well diode lasers
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Abstract
We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom alloy. © 1998 American Institute of Physics.
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Bulman</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Cree Research, Inc., Durham, North Carolina 27713</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>Cree Research, Inc., Durham</wicri:cityArea></affiliation></author><author><name sortKey="Doverspike, K" uniqKey="Doverspike K">K. Doverspike</name></author><author><name sortKey="Sheppard, S T" uniqKey="Sheppard S">S. T. Sheppard</name></author><author><name sortKey="Weeks, T W" uniqKey="Weeks T">T. W. Weeks</name></author><author><name sortKey="Leonard, M" uniqKey="Leonard M">M. Leonard</name></author><author><name sortKey="Kong, H S" uniqKey="Kong H">H. S. Kong</name></author><author><name sortKey="Dieringer, H" uniqKey="Dieringer H">H. Dieringer</name></author><author><name sortKey="Edmond, J" uniqKey="Edmond J">J. Edmond</name></author></titleStmt><publicationStmt><idno type="inist">98-0185653</idno><date when="1998-03-23">1998-03-23</date><idno type="stanalyst">PASCAL 98-0185653 AIP</idno><idno type="RBID">Pascal:98-0185653</idno><idno type="wicri:Area/Main/Corpus">017509</idno><idno type="wicri:Area/Main/Repository">016128</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Current density</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Quantum well lasers</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>8530V</term><term>4260L</term><term>7320D</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Laser puits quantique</term><term>Densité courant</term><term>Etat interface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. 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S.)</s1></fA11><fA11 i1="10" i2="1"><s1>DIERINGER (H.)</s1></fA11><fA11 i1="11" i2="1"><s1>EDMOND (J.)</s1></fA11><fA14 i1="01"><s1>Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island 02912</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Cree Research, Inc., Durham, North Carolina 27713</s1><sZ>4 aut.</sZ></fA14><fA20><s1>1418-1420</s1></fA20><fA21><s1>1998-03-23</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0185653</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. 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